Shapes of Ge and Si Particles Created on a Si/SiO2Substrate by Lift-off Technique

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

The development of photonic devices based on the use of coatings that consist of ordered dielectric particle arrays is determined by the need to reduce their energy consumption and increase their efficiency. Unlike perforated metal coatings commonly used to control light intensity in optoelectronic structures, dielectric coatings result in a significantly less light dissipation. We develop a method for obtaining an ordered dielectric particle array without using the etching process. The method is based on the use of electronic lithography with the removal of excess material by 'explosion', that is by the lift-off method. We obtained arrays of Ge and Si particles sized from 100 to 400 nm on silicon substrates. It was found that the particle shape is determined by both the slope of the hole walls in the electron resist and the deposited material flow direction.

Язык оригиналаанглийский
Название основной публикации2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings
ИздательIEEE Computer Society
Страницы33-36
Число страниц4
ISBN (электронное издание)9781665414982
DOI
СостояниеОпубликовано - 30 июн 2021
Событие22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Aya, Altai Region, Российская Федерация
Продолжительность: 30 июн 20214 июл 2021

Серия публикаций

НазваниеInternational Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Том2021-June
ISSN (печатное издание)2325-4173
ISSN (электронное издание)2325-419X

Конференция

Конференция22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021
СтранаРоссийская Федерация
ГородAya, Altai Region
Период30.06.202104.07.2021

Предметные области OECD FOS+WOS

  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
  • 2.02.IQ ИНЖЕНЕРИЯ, ЭЛЕКТРИЧЕСКАЯ И ЭЛЕКТРОННАЯ

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