Sensitivity of PbSnTe: In films to the radiation of free electron laser

A. N. Akimov, V. S. Epov, A. E. Klimov, V. V. Kubarev, N. S. Paschin

Результат исследования: Научные публикации в периодических изданияхстатья по материалам конференции

1 Цитирования (Scopus)

Аннотация

The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

Язык оригиналаанглийский
Номер статьи012016
Число страниц8
ЖурналJournal of Physics: Conference Series
Том946
Номер выпуска1
DOI
СостояниеОпубликовано - 23 фев 2018

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