Аннотация
The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.
Язык оригинала | английский |
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Номер статьи | 012016 |
Число страниц | 8 |
Журнал | Journal of Physics: Conference Series |
Том | 946 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 23 февр. 2018 |