Sensitivity of PbSnTe: In films to the radiation of free electron laser

A. N. Akimov; V. S. Epov; A. E. Klimov; V. V. Kubarev; N. S. Paschin

doi:10.1088/1742-6596/946/1/012016

Sensitivity of PbSnTe: In films to the radiation of free electron laser

A. N. Akimov, V. S. Epov, A. E. Klimov, V. V. Kubarev, N. S. Paschin

Кафедра общей физики ФФ

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

1 Цитирования (Scopus)

Аннотация

The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb_1-xSn _x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

Язык оригинала	английский
Номер статьи	012016
Число страниц	8
Журнал	Journal of Physics: Conference Series
Том	946
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/946/1/012016
Состояние	Опубликовано - 23 фев 2018

Доступ к документу

10.1088/1742-6596/946/1/012016

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Sensitivity of PbSnTe : In films to the radiation of free electron laser. / Akimov, A. N.; Epov, V. S.; Klimov, A. E.; Kubarev, V. V.; Paschin, N. S.

В: Journal of Physics: Conference Series, Том 946, № 1, 012016, 23.02.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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T1 - Sensitivity of PbSnTe

T2 - In films to the radiation of free electron laser

AU - Akimov, A. N.

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AU - Kubarev, V. V.

AU - Paschin, N. S.

PY - 2018/2/23

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