Sensitivity of PbSnTe: In films to the radiation of free electron laser

A. N. Akimov; V. S. Epov; A. E. Klimov; V. V. Kubarev; N. S. Paschin

doi:10.1088/1742-6596/946/1/012016

Sensitivity of PbSnTe: In films to the radiation of free electron laser

A. N. Akimov, V. S. Epov, A. E. Klimov, V. V. Kubarev, N. S. Paschin

Кафедра общей физики ФФ

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции

1 Цитирования (Scopus)

Аннотация

The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb_1-xSn _x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

Язык оригинала	английский
Номер статьи	012016
Число страниц	8
Журнал	Journal of Physics: Conference Series
Том	946
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/946/1/012016
Состояние	Опубликовано - 23 фев 2018

Доступ к документу

10.1088/1742-6596/946/1/012016

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Sensitivity of PbSnTe: In films to the radiation of free electron laser». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Akimov, A. N., Epov, V. S., Klimov, A. E., Kubarev, V. V., & Paschin, N. S. (2018). Sensitivity of PbSnTe: In films to the radiation of free electron laser. Journal of Physics: Conference Series, 946(1), [012016]. https://doi.org/10.1088/1742-6596/946/1/012016

@article{5a3b4bed5534454789d87e94ab2a1307,

title = "Sensitivity of PbSnTe: In films to the radiation of free electron laser",

abstract = "The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.",

keywords = "STATES",

author = "Akimov, {A. N.} and Epov, {V. S.} and Klimov, {A. E.} and Kubarev, {V. V.} and Paschin, {N. S.}",

year = "2018",

month = feb,

day = "23",

doi = "10.1088/1742-6596/946/1/012016",

language = "English",

volume = "946",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

Sensitivity of PbSnTe : In films to the radiation of free electron laser. / Akimov, A. N.; Epov, V. S.; Klimov, A. E.; Kubarev, V. V.; Paschin, N. S.

В: Journal of Physics: Conference Series, Том 946, № 1, 012016, 23.02.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции

TY - JOUR

T1 - Sensitivity of PbSnTe

T2 - In films to the radiation of free electron laser

AU - Akimov, A. N.

AU - Epov, V. S.

AU - Klimov, A. E.

AU - Kubarev, V. V.

AU - Paschin, N. S.

PY - 2018/2/23

Y1 - 2018/2/23

N2 - The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

AB - The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85043703659&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/946/1/012016

DO - 10.1088/1742-6596/946/1/012016

M3 - Conference article

AN - SCOPUS:85043703659

VL - 946

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012016

ER -