Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence

V. A. Zinovyev, A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii, A. V. Katsuba, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

Hybrid structures containing Ag nanoparticles and GeSi quantum dots were developed using the self-organization of metal nanoislands on the surface of a strained semiconductor structure. The enhanced photoluminescence from GeSi quantum dots (QDs) coupled with Ag nanoislands was obtained. Ag nanoislands epitaxially grown on top of the multilayered structures with GeSi QDs support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing Ag nanoparticle parameters. The numerical modeling of surface plasmon resonance allows attributing this effect to the increase of the recombination rate due to the coupling of QD emitters with Ag nanoislands.

Язык оригиналаанглийский
Номер статьи243108
Число страниц7
ЖурналJournal of Applied Physics
Том127
Номер выпуска24
DOI
СостояниеОпубликовано - 28 июн 2020

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