Аннотация
It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.
Язык оригинала | английский |
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Страницы (с-по) | 426-429 |
Число страниц | 4 |
Журнал | JETP Letters |
Том | 105 |
Номер выпуска | 7 |
DOI | |
Состояние | Опубликовано - 1 апр 2017 |