Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.

Язык оригиналаанглийский
Страницы (с-по)426-429
Число страниц4
ЖурналJETP Letters
Том105
Номер выпуска7
DOI
СостояниеОпубликовано - 1 апр 2017

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