Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

Artem I. Ivanov, Anton K. Gutakovskii, Igor A. Kotin, Regina A. Soots, Irina V. Antonova

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 106–109 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 103 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.

Язык оригиналаанглийский
Номер статьи1900310
Число страниц11
ЖурналAdvanced Electronic Materials
Том5
Номер выпуска10
DOI
СостояниеОпубликовано - 22 авг 2019

Fingerprint Подробные сведения о темах исследования «Resistive Switching Effect with ON/OFF Current Relation up to 10<sup>9</sup> in 2D Printed Composite Films of Fluorinated Graphene with V<sub>2</sub>O<sub>5</sub> Nanoparticles». Вместе они формируют уникальный семантический отпечаток (fingerprint).

  • Цитировать