Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry

Irina B. Mishchenko, Darya E. Petukhova, Mikhail S. Lebedev

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

The HfO2/TiO2 multilayers with different bilayer period, which are currently used as dielectrics in modern microelectronics, were deposited by atomic layer deposition (ALD). The complementary ellipsometric techniques were applied to measure the thickness and describe the optical properties of the stacks and superlattices deposited. A nonmonotonic dependence of the effective refractive index on the number of each layer ALD-cycles was shown. The approach suggested can be useful for the similar ALD-processes and for further studies of the properties of dielectrics. The data obtained give important information about the features of Hf02 and TiO2nucleation during alternate layers growth.

Язык оригиналаанглийский
Название основной публикации2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings
ИздательIEEE Computer Society
Страницы26-29
Число страниц4
Том2018-July
ISBN (печатное издание)9781538650219
DOI
СостояниеОпубликовано - 13 авг 2018
Событие19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Erlagol, Altai, Российская Федерация
Продолжительность: 29 июн 20183 июл 2018

Конференция

Конференция19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018
СтранаРоссийская Федерация
ГородErlagol, Altai
Период29.06.201803.07.2018

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  • Цитировать

    Mishchenko, I. B., Petukhova, D. E., & Lebedev, M. S. (2018). Research of atomic layer deposited HfO2/TiO2 multilayer structures by spectroscopic and multiangle monochromatic null ellipsometry. В 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings (Том 2018-July, стр. 26-29). [8434943] IEEE Computer Society. https://doi.org/10.1109/EDM.2018.8434943