@inproceedings{7617bfc4787c4589ba126abc875adfc6,
title = "Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux",
abstract = "The process of transformation of structure and change of elemental composition of (001)InP in a flux of arsenic in ultra-high vacuum is studied in-situ by the method of reflection high-energy electron diffraction. The process of substitution of phosphorus by arsenic depending on the annealing conditions and the formation of the In$P_{x}A_{s1-x}$ layer are shown experimentally. At 500°C annealing temperature in the surface layer, the substitution of phosphorus by arsenic is 13%, at 540°C - 41%. ",
keywords = "Annealing, Indium phosphide, Phosphorous, Substitution",
author = "Dmitriev, {Dmitriy V.} and Mitrofanov, {Ivan A.} and Kolosovsky, {Danil A.} and Toropov, {Alexander I.} and Zhuravlev, {Konstantin S.}",
year = "2020",
month = jul,
day = "1",
doi = "10.1109/EDM49804.2020.9153517",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "5--8",
booktitle = "2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020",
address = "United States",
note = "21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 ; Conference date: 29-06-2020 Through 03-07-2020",
}