Release of carriers from traps enhanced by hopping

A. V. Nenashev, V. V. Valkovskii, J. O. Oelerich, A. V. Dvurechenskii, O. Semeniuk, A. Reznik, F. Gebhard, S. D. Baranovskii

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

Trapping of electrons in localized states strongly affects optoelectronic phenomena in disordered semiconductors. In this paper, it is shown by numerical simulations and by analytical calculations that the release of the trapped electrons into the conduction band can be substantially enhanced by hopping of electrons between the traps. The effect strongly depends on several factors, such as the energy depth of the given trap, the concentration of the assisting traps, and the magnitude of the applied electric field. Recipes are given for theoretical studies of the effect by analytical equations and by kinetic Monte Carlo simulations.

Язык оригиналаанглийский
Номер статьи155207
Число страниц10
ЖурналPhysical Review B
Том98
Номер выпуска15
DOI
СостояниеОпубликовано - 30 окт 2018

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