The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.
|Журнал||Journal of Physics: Conference Series|
|Состояние||Опубликовано - 17 апр 2019|
|Событие||20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Российская Федерация|
Продолжительность: 26 ноя 2018 → 30 ноя 2018