Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures

V. S. Khoroshilov; D. M. Kazantsev; A. G. Zhuravlev

doi:10.1088/1742-6596/1199/1/012011

Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures

V. S. Khoroshilov, D. M. Kazantsev, A. G. Zhuravlev

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

2 Цитирования (Scopus)

Аннотация

The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.

Язык оригинала	английский
Номер статьи	012011
Журнал	Journal of Physics: Conference Series
Том	1199
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1199/1/012011
Состояние	Опубликовано - 17 апр 2019
Событие	20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Российская Федерация Продолжительность: 26 ноя 2018 → 30 ноя 2018

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10.1088/1742-6596/1199/1/012011

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title = "Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures",

abstract = "The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.",

author = "Khoroshilov, {V. S.} and Kazantsev, {D. M.} and Zhuravlev, {A. G.}",

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Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures. / Khoroshilov, V. S.; Kazantsev, D. M.; Zhuravlev, A. G.

В: Journal of Physics: Conference Series, Том 1199, № 1, 012011, 17.04.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures

AU - Khoroshilov, V. S.

AU - Kazantsev, D. M.

AU - Zhuravlev, A. G.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.

AB - The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.

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DO - 10.1088/1742-6596/1199/1/012011

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AN - SCOPUS:85065625611

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

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T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

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