Relaxation of the Excited States of Arsenic in Strained Germanium

K. A. Kovalevsky, Yu Yu Choporova, R. Kh Zhukavin, N. V. Abrosimov, S. G. Pavlov, H. W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1s (Γ1) ground state. The experimentally measured decay times of the 2p0, 3p0, and 2p± states are 1.3, no more than 0.2, and 0.4 ns, respectively. It is shown that the relatively high relaxation rate of the 2p± state is defined by the interaction with intravalley TA photons.

Язык оригиналаанглийский
Страницы (с-по)1347-1351
Число страниц5
ЖурналSemiconductors
Том54
Номер выпуска10
DOI
СостояниеОпубликовано - 1 окт 2020

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