Relaxation of the electric current in Si3N4: Experiment and numerical simulation

Yu N. Novikov; V. A. Gritsenko

doi:10.1134/S1063783417010255

Relaxation of the electric current in Si₃N₄: Experiment and numerical simulation

Yu N. Novikov, V. A. Gritsenko

Физический факультет

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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Аннотация

The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10^–13 cm².

Язык оригинала	английский
Страницы (с-по)	47-52
Число страниц	6
Журнал	Physics of the Solid State
Том	59
Номер выпуска	1
DOI	https://doi.org/10.1134/S1063783417010255
Состояние	Опубликовано - 1 янв. 2017

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10.1134/S1063783417010255

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abstract = "The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.",

keywords = "SILICON-NITRIDE FILMS, MEMORY, SEMICONDUCTOR, IONIZATION, TRANSPORT, TRAP",

author = "Novikov, {Yu N.} and Gritsenko, {V. A.}",

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Relaxation of the electric current in Si₃N₄ : Experiment and numerical simulation. / Novikov, Yu N.; Gritsenko, V. A.

В: Physics of the Solid State, Том 59, № 1, 01.01.2017, стр. 47-52.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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