Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

V. Ya Aleshkin; A. A. Dubinov; V. V. Rumyantsev; M. A. Fadeev; O. L. Domnina; N. N. Mikhailov; S. A. Dvoretsky; F. Teppe; V. I. Gavrilenko; S. V. Morozov

doi:10.1088/1361-648X/aaebf5

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

V. Ya Aleshkin, A. A. Dubinov, V. V. Rumyantsev, M. A. Fadeev, O. L. Domnina, N. N. Mikhailov, S. A. Dvoretsky, F. Teppe, V. I. Gavrilenko, S. V. Morozov

Учебно-научная лаборатория квантовых явлений в конденсированных системах ФФ

Результат исследования: Научные публикации в периодических изданиях › статья

6 Цитирования (Scopus)

Аннотация

Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.

Язык оригинала	английский
Номер статьи	495301
Страницы (с-по)	495301
Число страниц	6
Журнал	Journal of Physics Condensed Matter
Том	30
Номер выпуска	49
DOI	https://doi.org/10.1088/1361-648X/aaebf5
Состояние	Опубликовано - 12 дек 2018

Доступ к документу

10.1088/1361-648X/aaebf5

Link to publication in Scopus

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Цитировать

Aleshkin, V. Y., Dubinov, A. A., Rumyantsev, V. V., Fadeev, M. A., Domnina, O. L., Mikhailov, N. N., Dvoretsky, S. A., Teppe, F., Gavrilenko, V. I., & Morozov, S. V. (2018). Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications. Journal of Physics Condensed Matter, 30(49), 495301. [495301]. https://doi.org/10.1088/1361-648X/aaebf5

@article{25188d6392874b08b9203a925dac1114,

title = "Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications",

abstract = "Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.",

keywords = "carrier lifetime, HgCdTe, long-wavelength lasers, narrow-gap, radiative recombination, MU-M, LIFETIMES, STIMULATED-EMISSION, HGCDTE, WAVELENGTH, ALLOY, PHOTOCONDUCTIVITY RELAXATION, RANGE",

author = "Aleshkin, {V. Ya} and Dubinov, {A. A.} and Rumyantsev, {V. V.} and Fadeev, {M. A.} and Domnina, {O. L.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and F. Teppe and Gavrilenko, {V. I.} and Morozov, {S. V.}",

year = "2018",

month = dec,

day = "12",

doi = "10.1088/1361-648X/aaebf5",

language = "English",

volume = "30",

pages = "495301",

journal = "Journal of Physics Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd.",

number = "49",

}

Aleshkin, VY, Dubinov, AA, Rumyantsev, VV, Fadeev, MA, Domnina, OL, Mikhailov, NN, Dvoretsky, SA, Teppe, F, Gavrilenko, VI & Morozov, SV 2018, 'Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications', Journal of Physics Condensed Matter, том. 30, № 49, 495301, стр. 495301. https://doi.org/10.1088/1361-648X/aaebf5

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications. / Aleshkin, V. Ya; Dubinov, A. A.; Rumyantsev, V. V.; Fadeev, M. A.; Domnina, O. L.; Mikhailov, N. N.; Dvoretsky, S. A.; Teppe, F.; Gavrilenko, V. I.; Morozov, S. V.

В: Journal of Physics Condensed Matter, Том 30, № 49, 495301, 12.12.2018, стр. 495301.

Результат исследования: Научные публикации в периодических изданиях › статья

TY - JOUR

T1 - Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

AU - Aleshkin, V. Ya

AU - Dubinov, A. A.

AU - Rumyantsev, V. V.

AU - Fadeev, M. A.

AU - Domnina, O. L.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Teppe, F.

AU - Gavrilenko, V. I.

AU - Morozov, S. V.

PY - 2018/12/12

Y1 - 2018/12/12

N2 - Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.

AB - Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.

KW - carrier lifetime

KW - HgCdTe

KW - long-wavelength lasers

KW - narrow-gap

KW - radiative recombination

KW - MU-M

KW - LIFETIMES

KW - STIMULATED-EMISSION

KW - HGCDTE

KW - WAVELENGTH

KW - ALLOY

KW - PHOTOCONDUCTIVITY RELAXATION

KW - RANGE

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U2 - 10.1088/1361-648X/aaebf5

DO - 10.1088/1361-648X/aaebf5

M3 - Article

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AN - SCOPUS:85056715820

VL - 30

SP - 495301

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

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M1 - 495301

ER -