Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si

Aleksey V. Kacyuba, Anatoly V. Dvurechenskii, Gennady N. Kamaev, Vladimir A. Volodin, Aleksey Y. Krupin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

1 Цитирования (Scopus)


We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.

Язык оригиналаанглийский
Номер статьи127554
Число страниц4
ЖурналMaterials Letters
СостояниеОпубликовано - 1 июн 2020


Подробные сведения о темах исследования «Radiation-Induced epitaxial CaSi<sub>2</sub> film growth at the molecular-beam epitaxy of CaF<sub>2</sub> on Si». Вместе они формируют уникальный семантический отпечаток (fingerprint).