Radiation enhancement in doped AlGaN-structures upon optical pumping

P. A. Bokhan; K. S. Zhuravlev; D. E. Zakrevsky; T. V. Malin; I. V. Osinnykh; N. V. Fateev

doi:10.1134/S1063785017010059

Radiation enhancement in doped AlGaN-structures upon optical pumping

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh, N. V. Fateev

Физический факультет

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized Al_xGa_1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al_0.5Ga_0.5N and ~360 THz for Al_0.74Ga_0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm^–1 for Al_0.5Ga_0.5N at λ ≈ 528 nm and g ≈ 20 cm^–1 for Al_0.74Ga_0.26N at λ ≈ 468 nm.

Язык оригинала	английский
Страницы (с-по)	46-49
Число страниц	4
Журнал	Technical Physics Letters
Том	43
Номер выпуска	1
DOI	https://doi.org/10.1134/S1063785017010059
Состояние	Опубликовано - 1 янв. 2017

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10.1134/S1063785017010059

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title = "Radiation enhancement in doped AlGaN-structures upon optical pumping",

abstract = "Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.",

keywords = "MOLECULAR-BEAM EPITAXY",

author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevsky, {D. E.} and Malin, {T. V.} and Osinnykh, {I. V.} and Fateev, {N. V.}",

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Radiation enhancement in doped AlGaN-structures upon optical pumping. / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E. и др.

В: Technical Physics Letters, Том 43, № 1, 01.01.2017, стр. 46-49.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Radiation enhancement in doped AlGaN-structures upon optical pumping

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevsky, D. E.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Fateev, N. V.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.

AB - Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.

KW - MOLECULAR-BEAM EPITAXY

UR - http://www.scopus.com/inward/record.url?scp=85013254078&partnerID=8YFLogxK

U2 - 10.1134/S1063785017010059

DO - 10.1134/S1063785017010059

M3 - Article

AN - SCOPUS:85013254078

VL - 43

SP - 46

EP - 49

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 1

ER -

Radiation enhancement in doped AlGaN-structures upon optical pumping

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