Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

V. A. Zinovyev; A. F. Zinovieva; A. V. Katsuba; Zh V. Smagina; A. V. Dvurechenskii; O. M. Borodavchenko; V. D. Zhivulko; A. V. Mudryi

doi:10.1134/S1063782618160406

Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

V. A. Zinovyev, A. F. Zinovieva, A. V. Katsuba, Zh V. Smagina, A. V. Dvurechenskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi

Кафедра физики полупроводников ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.

Язык оригинала	английский
Страницы (с-по)	2149-2152
Число страниц	4
Журнал	Semiconductors
Том	52
Номер выпуска	16
DOI	https://doi.org/10.1134/S1063782618160406
Состояние	Опубликовано - 1 дек. 2018

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10.1134/S1063782618160406

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title = "Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands",

abstract = "Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.",

keywords = "ROOM-TEMPERATURE, ELECTROLUMINESCENCE",

author = "Zinovyev, {V. A.} and Zinovieva, {A. F.} and Katsuba, {A. V.} and Smagina, {Zh V.} and Dvurechenskii, {A. V.} and Borodavchenko, {O. M.} and Zhivulko, {V. D.} and Mudryi, {A. V.}",

year = "2018",

month = dec,

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doi = "10.1134/S1063782618160406",

language = "English",

volume = "52",

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journal = "Semiconductors",

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number = "16",

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Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. / Zinovyev, V. A.; Zinovieva, A. F.; Katsuba, A. V. и др.

В: Semiconductors, Том 52, № 16, 01.12.2018, стр. 2149-2152.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

AU - Zinovyev, V. A.

AU - Zinovieva, A. F.

AU - Katsuba, A. V.

AU - Smagina, Zh V.

AU - Dvurechenskii, A. V.

AU - Borodavchenko, O. M.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.

AB - Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.

KW - ROOM-TEMPERATURE

KW - ELECTROLUMINESCENCE

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JO - Semiconductors

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SN - 1063-7826

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