Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

V. S. Khoroshilov; D. E. Protopopov; D. M. Kazantsev; A. G. Zhuravlev

doi:10.1088/1742-6596/1482/1/012013

Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

V. S. Khoroshilov, D. E. Protopopov, D. M. Kazantsev, A. G. Zhuravlev

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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Аннотация

A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p⁺-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p⁺-GaAs surface is compared with that observed on Cs/UP⁺-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.

Язык оригинала	английский
Номер статьи	012013
Журнал	Journal of Physics: Conference Series
Том	1482
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1482/1/012013
Состояние	Опубликовано - 1 мар. 2020
Событие	21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Российская Федерация Продолжительность: 25 нояб. 2019 → 29 нояб. 2019

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10.1088/1742-6596/1482/1/012013

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title = "Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers",

abstract = "A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.",

author = "Khoroshilov, {V. S.} and Protopopov, {D. E.} and Kazantsev, {D. M.} and Zhuravlev, {A. G.}",

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Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers. / Khoroshilov, V. S.; Protopopov, D. E.; Kazantsev, D. M. и др.

В: Journal of Physics: Conference Series, Том 1482, № 1, 012013, 01.03.2020.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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T1 - Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

AU - Khoroshilov, V. S.

AU - Protopopov, D. E.

AU - Kazantsev, D. M.

AU - Zhuravlev, A. G.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.

AB - A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.

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T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

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