Аннотация
The current work is devoted to a photoluminescence study of high-pressure high-temperature diamonds synthesized in the Mg-Ge-C system. The diamond crystals were shown to contain optically active nitrogen-vacancy, silicon-vacancy and germanium-vacancy centers. Lifetime measurements were carried out for the promising negatively charged germanium-vacancy center (GeV−). The delay between the excitation laser pulse (λex = 375 nm) and the fluorescence of the GeV− center was observed. The excitation transfer was considered as a possible explanation of this phenomenon.
Язык оригинала | английский |
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Страницы (с-по) | 145-149 |
Число страниц | 5 |
Журнал | Diamond and Related Materials |
Том | 79 |
DOI | |
Состояние | Опубликовано - 1 окт 2017 |