Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

Anatoly Dvurechenskii, Aigul Zinovieva, Vladimir Zinovyev, Alexey Nenashev, Zhanna Smagina, Sergey Teys, Aleksandr Shklyaev, Simon Erenburg, Svetlana Trubina, Olga Borodavchenko, Vadim Zhivulko, Aleksandr Mudryi

Результат исследования: Научные публикации в периодических изданияхстатья

3 Цитирования (Scopus)

Аннотация

The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200–250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40–50 nm) laterally ordered QDs grown on the nanodisk surface are studied. The experimental results are analyzed basing on the calculations of energy spectra, electron and hole wave functions. It is found that the strain accumulation in multi-layered structure is the main factor providing the room temperature PL. The new type of QD structures that should provide the observation of enhanced PL from SiGe QDs at room temperature is proposed. The structures represent the stacked compact groups of laterally aligned QDs incorporated in Si at the distance 30–40 nm above the large nanodisks.

Язык оригиналаанглийский
Номер статьи1700187
Число страниц6
ЖурналPhysica Status Solidi (C) Current Topics in Solid State Physics
Том14
Номер выпуска12
DOI
СостояниеОпубликовано - 1 дек 2017

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