Photoluminescence excitation study of split-vacancy centers in diamond

E. A. Ekimov, P. S. Sherin, V. S. Krivobok, S. G. Lyapin, V. A. Gavva, M. V. Kondrin

Результат исследования: Научные публикации в периодических изданияхстатья

9 Цитирования (Scopus)

Аннотация

Two known representatives of the split-vacancy complexes in diamond, the negatively charged silicon-vacancy SiV- and recently discovered germanium-vacancy GeV- defects, were comparatively studied for their photoluminescence (PL) and complementary optical absorption spectra. The observed strong difference between luminescence and absorption spectra indicates a strong frequency defect, that is the difference of binding energies of impurity atom in the ground and excited electronic states, in these color centers. The presence of frequency defect is well supported by first-principle calculations. The obtained results accompanied with isotopic effects shed light on the structure of these centers in the ground and excited electronic states that would open the doorway to their theoretical description.

Язык оригиналаанглийский
Номер статьи045206
Число страниц8
ЖурналPhysical Review B
Том97
Номер выпуска4
DOI
СостояниеОпубликовано - 17 янв 2018

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