Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers

A. G. Zhuravlev; D. M. Kazantsev; V. S. Khoroshilov; A. S. Kozhukhov; V. L. Alperovich

doi:10.1088/1742-6596/993/1/012007

Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers

A. G. Zhuravlev, D. M. Kazantsev, V. S. Khoroshilov, A. S. Kozhukhov, V. L. Alperovich

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

1 Цитирования (Scopus)

Аннотация

The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from R_q 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.

Язык оригинала	английский
Номер статьи	012007
Число страниц	6
Журнал	Journal of Physics: Conference Series
Том	993
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/993/1/012007
Состояние	Опубликовано - 10 апр. 2018
Событие	19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 нояб. 2017 → 1 дек. 2017

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10.1088/1742-6596/993/1/012007

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abstract = "The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.",

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note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",

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Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers. / Zhuravlev, A. G.; Kazantsev, D. M.; Khoroshilov, V. S. и др.

В: Journal of Physics: Conference Series, Том 993, № 1, 012007, 10.04.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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T1 - Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers

AU - Zhuravlev, A. G.

AU - Kazantsev, D. M.

AU - Khoroshilov, V. S.

AU - Kozhukhov, A. S.

AU - Alperovich, V. L.

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N2 - The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.

AB - The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.

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