Photoelectron scattering in a p-GaN(Cs,O) photocathode

S. A. Rozhkov; V. V. Bakin; S. N. Kosolobov; H. E. Scheibler; A. S. Terekhov

doi:10.1088/1742-6596/993/1/012027

Photoelectron scattering in a p-GaN(Cs,O) photocathode

S. A. Rozhkov, V. V. Bakin, S. N. Kosolobov, H. E. Scheibler, A. S. Terekhov

Кафедра общей физики ФФ

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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Аннотация

Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m _hh/m ₀ = 2.3 ± 0.3.

Язык оригинала	английский
Номер статьи	012027
Число страниц	7
Журнал	Journal of Physics: Conference Series
Том	993
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/993/1/012027
Состояние	Опубликовано - 10 апр. 2018
Событие	19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 нояб. 2017 → 1 дек. 2017

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10.1088/1742-6596/993/1/012027

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title = "Photoelectron scattering in a p-GaN(Cs,O) photocathode",

abstract = "Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.",

keywords = "NEGATIVE ELECTRON-AFFINITY, GAN, BAND, INTERFACE",

author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.} and Terekhov, {A. S.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",

year = "2018",

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doi = "10.1088/1742-6596/993/1/012027",

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Photoelectron scattering in a p-GaN(Cs,O) photocathode. / Rozhkov, S. A.; Bakin, V. V.; Kosolobov, S. N. и др.

В: Journal of Physics: Conference Series, Том 993, № 1, 012027, 10.04.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - Photoelectron scattering in a p-GaN(Cs,O) photocathode

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

AB - Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

KW - NEGATIVE ELECTRON-AFFINITY

KW - GAN

KW - BAND

KW - INTERFACE

UR - http://www.scopus.com/inward/record.url?scp=85046088949&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/993/1/012027

DO - 10.1088/1742-6596/993/1/012027

M3 - Conference article

AN - SCOPUS:85046088949

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012027

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

Y2 - 27 November 2017 through 1 December 2017

ER -

Photoelectron scattering in a p-GaN(Cs,O) photocathode

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