Аннотация
Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.
Язык оригинала | английский |
---|---|
Номер статьи | 012027 |
Число страниц | 7 |
Журнал | Journal of Physics: Conference Series |
Том | 993 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 10 апр. 2018 |
Событие | 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 нояб. 2017 → 1 дек. 2017 |