Phosphorus incorporation into graphitic material via hot pressing of graphite oxide and triphenylphosphine

A. V. Okotrub, M. A. Kanygin, V. O. Koroteev, S. G. Stolyarova, D. V. Gorodetskiy, Yu V. Fedoseeva, I. P. Asanov, L. G. Bulusheva, A. Vyalikh

Результат исследования: Научные публикации в периодических изданияхстатья

5 Цитирования (Scopus)

Аннотация

It was shown, that the treatment of graphite oxide (GO) at a temperature of 1000 °C and a static pressure of 500 bar recovers the graphene layers. Addition of triphenylphosphine to GO helps in removal of oxygen during the treatment and allows introducing ca. 0.7 at% of phosphorus in the product. Most phosphorus atoms are bonded with oxygen as the 31P nuclear magnetic resonance spectrum showed. An analysis of the X-ray photoelectron P 2p spectrum additionally found the components corresponding to C–P and P–P bonding. Assembling of phosphorus atoms into nanometer clusters was confirmed by transmission electron microscopy. Raman spectroscopy and electrical conductivity measurements revealed the n-type doping of graphitic material through the incorporation of phosphorus.

Язык оригиналаанглийский
Страницы (с-по)53-58
Число страниц6
ЖурналSynthetic Metals
Том248
DOI
СостояниеОпубликовано - 1 фев 2019

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