Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence

Denis S. Milakhin, Timur V. Malin, Vladimir G. Mansurov, Yury G. Galitsyn, Konstantin S. Zhuravlev

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.

Язык оригиналаанглийский
Название основной публикации2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
ИздательIEEE Computer Society
Страницы14-18
Число страниц5
ISBN (электронное издание)9781728168463
DOI
СостояниеОпубликовано - 1 июл 2020
Событие21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 - Chemal, Российская Федерация
Продолжительность: 29 июн 20203 июл 2020

Серия публикаций

НазваниеInternational Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Том2020-June
ISSN (печатное издание)2325-4173
ISSN (электронное издание)2325-419X

Конференция

Конференция21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
СтранаРоссийская Федерация
ГородChemal
Период29.06.202003.07.2020

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  • Цитировать

    Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., & Zhuravlev, K. S. (2020). Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. В 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 (стр. 14-18). [9153543] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2020-June). IEEE Computer Society. https://doi.org/10.1109/EDM49804.2020.9153543