Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence

Denis S. Milakhin; Timur V. Malin; Vladimir G. Mansurov; Yury G. Galitsyn; Konstantin S. Zhuravlev

doi:10.1109/EDM49804.2020.9153543

Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence

Denis S. Milakhin, Timur V. Malin, Vladimir G. Mansurov, Yury G. Galitsyn, Konstantin S. Zhuravlev

Лаборатория полупроводниковых и диэлектрических материалов ФФ

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › рецензирование

Аннотация

In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.

Язык оригинала	английский
Название основной публикации	2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
Издатель	IEEE Computer Society
Страницы	14-18
Число страниц	5
ISBN (электронное издание)	9781728168463
DOI	https://doi.org/10.1109/EDM49804.2020.9153543
Состояние	Опубликовано - 1 июл 2020
Событие	21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 - Chemal, Российская Федерация Продолжительность: 29 июн 2020 → 3 июл 2020

Серия публикаций

Название	International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Том	2020-June
ISSN (печатное издание)	2325-4173
ISSN (электронное издание)	2325-419X

Конференция

Конференция	21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
Страна	Российская Федерация
Город	Chemal
Период	29.06.2020 → 03.07.2020

Доступ к документу

10.1109/EDM49804.2020.9153543

Link to publication in Scopus

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Цитировать

Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., & Zhuravlev, K. S. (2020). Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. В 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 (стр. 14-18). [9153543] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2020-June). IEEE Computer Society. https://doi.org/10.1109/EDM49804.2020.9153543

Milakhin, Denis S. ; Malin, Timur V. ; Mansurov, Vladimir G. ; Galitsyn, Yury G. ; Zhuravlev, Konstantin S. / Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. стр. 14-18 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

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title = "Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence",

abstract = "In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation. ",

keywords = "AlN, Inversion domains, NH3-MBE, Nitridation",

author = "Milakhin, {Denis S.} and Malin, {Timur V.} and Mansurov, {Vladimir G.} and Galitsyn, {Yury G.} and Zhuravlev, {Konstantin S.}",

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Milakhin, DS, Malin, TV, Mansurov, VG, Galitsyn, YG & Zhuravlev, KS 2020, Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. в 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020., 9153543, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, том. 2020-June, IEEE Computer Society, стр. 14-18, 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020, Chemal, Российская Федерация, 29.06.2020. https://doi.org/10.1109/EDM49804.2020.9153543

Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. / Milakhin, Denis S.; Malin, Timur V.; Mansurov, Vladimir G.; Galitsyn, Yury G.; Zhuravlev, Konstantin S.

2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. стр. 14-18 9153543 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2020-June).

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › рецензирование

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T1 - Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence

AU - Milakhin, Denis S.

AU - Malin, Timur V.

AU - Mansurov, Vladimir G.

AU - Galitsyn, Yury G.

AU - Zhuravlev, Konstantin S.

PY - 2020/7/1

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N2 - In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.

AB - In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.

KW - AlN

KW - Inversion domains

KW - NH3-MBE

KW - Nitridation

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Milakhin DS, Malin TV, Mansurov VG, Galitsyn YG, Zhuravlev KS. Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. В 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society. 2020. стр. 14-18. 9153543. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). https://doi.org/10.1109/EDM49804.2020.9153543