Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

S. G. Cherkova, V. A. Volodin, Fan Zhang, M. Stoffel, H. Rinnert, M. Vergnat

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

The optical properties of GeO[SiO] and GeO[SiO2] solid alloy films grown on Si(001) substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and photoluminescence (PL) spectroscopies. A PL signal was observed in the infrared region both for as-deposited and annealed germanium silicate suboxide films. Furnace annealing led to an increase of the PL signal and to a redshift of the PL maximum. The PL at ∼1100 nm is most probably due to defect-induced radiative transitions while the PL at ∼1500 nm may be rather caused by amorphous Ge nanoclusters and Ge nanocrystals. Finally, the temperature dependence of the PL was studied. Anomalous quenching of the PL signal is observed which does not follow the classical Arrhenius law. The temperature dependence of the PL intensity is well explained by using a Berthelot model.

Язык оригиналаанглийский
Номер статьи111736
ЖурналOptical Materials
Том122
DOI
СостояниеОпубликовано - дек 2021

Предметные области OECD FOS+WOS

  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
  • 1.04 ХИМИЧЕСКИЕ НАУКИ
  • 2.02 ЭЛЕКТРОТЕХНИКА, ЭЛЕКТРОННАЯ ТЕХНИКА, ИНФОРМАЦИОННЫЕ ТЕХНОЛОГИИ
  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ

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