Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

3 Цитирования (Scopus)

Аннотация

The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

Язык оригиналаанглийский
Страницы (с-по)203-206
Число страниц4
ЖурналSemiconductors
Том51
Номер выпуска2
DOI
СостояниеОпубликовано - 1 фев 2017

Fingerprint Подробные сведения о темах исследования «Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать