Novel single-source precursors for SiB:XCyNz film deposition

Ivan S. Merenkov, Boris A. Gostevskii, Pavel O. Krasnov, Tamara V. Basova, Yuri M. Zhukov, Igor A. Kasatkin, Sergey V. Sysoev, Victor I. Kosyakov, Maksim N. Khomyakov, Marina L. Kosinova

Результат исследования: Научные публикации в периодических изданияхстатья

5 Цитирования (Scopus)

Аннотация

Novel CVD precursors for SiBxCyNz film deposition such as HCCB[N(SiMe3)2]2, MeB[N(SiMe3)2]2 and Me3SiCCB[N(SiMe3)2]2 were synthesized. The structure and composition of the compounds were investigated with NMR, FTIR, Raman spectroscopies and CHN-analysis. Comparison of theoretical and experimental FTIR and Raman data was performed. Thermogravimetric analysis and the static tensimetry method with a glass membrane null manometer demonstrated that Me3SiCCB[N(SiMe3)2]2 is the most suitable CVD precursor. The formation of SiBxCyNz films was predicted using thermodynamic modelling at a temperature below 1600 K in the total pressure range of 0.27-1333 Pa. The films of chemical composition Si23.7B8.3C51.4N9.6O7 were deposited by low-pressure chemical vapour deposition (LPCVD) and their morphology and mechanical properties were investigated. The amorphous SiBxCyNz films with a smooth surface exhibited hardness, Young's modulus and elastic recovery equal to 17.5 ± 0.9 GPa, 176 ± 11 GPa and 61 ± 2%, respectively.

Язык оригиналаанглийский
Страницы (с-по)11926-11933
Число страниц8
ЖурналNew Journal of Chemistry
Том41
Номер выпуска20
DOI
СостояниеОпубликовано - 2017
Опубликовано для внешнего пользованияДа

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  • Цитировать

    Merenkov, I. S., Gostevskii, B. A., Krasnov, P. O., Basova, T. V., Zhukov, Y. M., Kasatkin, I. A., Sysoev, S. V., Kosyakov, V. I., Khomyakov, M. N., & Kosinova, M. L. (2017). Novel single-source precursors for SiB:XCyNz film deposition. New Journal of Chemistry, 41(20), 11926-11933. https://doi.org/10.1039/c7nj01651d