New multilayer graphene-based flash memory

Yu N. Novikov, V. A. Gritsenko

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование


In the present work, it is proposed to use multilayer graphene (MLG) as a charge storage layer in the non-volatile memory based on the Si/ZrO2/MLG/SiO2/Si structure. The write/erase, retention characteristics and charge density kinetics in the MLG of the memory element are calculated. Due to the metallic properties of MLG and the blocking layer made of high-k dielectric, the voltage drop on them in the write/erase mode is decreased. At the same time, the increase in the voltage drop in the SiO2 tunneling layer grows, in its turn, the Fowler-Nordheim current, which leads to a higher memory element performance. The big work function for electrons (∼5 eV) in MLG contributes to a better charge storage in it. According to our calculations, for write/erase voltages of ±11 V, there is a 5 V memory window, and the memory window value will be equal to 3 V in 10 years.

Язык оригиналаанглийский
Номер статьи106306
Число страниц7
ЖурналMaterials Research Express
Номер выпуска10
СостояниеОпубликовано - 21 авг. 2019


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