Аннотация
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.
Язык оригинала | английский |
---|---|
Страницы (с-по) | 628-631 |
Число страниц | 4 |
Журнал | Semiconductors |
Том | 52 |
Номер выпуска | 5 |
DOI | |
Состояние | Опубликовано - 1 мая 2018 |