Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers

I. V. Osinnykh, T. V. Malin, V. F. Plyusnin, K. S. Zhuravlev, B. Ya Ber, D. Yu Kazantsev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

4 Цитирования (Scopus)


We report photoluminescence investigations of heavily doped Al x Ga1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of Al x Ga1-xN:Si films with the Al content higher than 0.46 covering the whole visible spectral range. This band is attributed to donor-acceptor transitions. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be the (2-/3-) transition level of the V Al.

Язык оригиналаанглийский
Номер статьи012002
Число страниц6
ЖурналJournal of Physics: Conference Series
Номер выпуска1
СостояниеОпубликовано - 11 апр 2017


Подробные сведения о темах исследования «Nature of intensive defect-related broadband luminescence of heavily doped Al<sub>x</sub>Ga<sub>1-x</sub>N: Si layers». Вместе они формируют уникальный семантический отпечаток (fingerprint).