Multiphonon trap ionization mechanism in amorphous SiNx

Yu N. Novikov, V. A. Gritsenko

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.

Язык оригиналаанглийский
Номер статьи121442
ЖурналJournal of Non-Crystalline Solids
Том582
DOI
СостояниеОпубликовано - 15 апр. 2022

Предметные области OECD FOS+WOS

  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

Fingerprint

Подробные сведения о темах исследования «Multiphonon trap ionization mechanism in amorphous SiNx». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать