The paper discusses the development of optical-emission and mass-spectral with inductively coupled plasma (ICP-OES/MS) analysis procedures for determination of traces in cadmium. These procedures are based on the preliminary concentration of traces by selective volatilization of cadmium in vacuum through the film of its own oxide and the subsequent ICP-OES/MS analysis of concentrate. The relative concentration coefficient for the entire array of the experimental data is at least 150. The trace limits of detection (LODs) have been evaluated for the developed ICP-OES and ICP-MS analysis procedures. The ICP-OES method allows to determine 43 traces (Ag, Al, As, Au, B, Ba, Be, Ca, Ce, Co, Cr, Cu, Dy, Er, Fe, Ga, Gd, Hf, Ho, K, La, Li, Lu, Mg, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Ti, V, W, Y, Yb, Zn, Zr) at the concentration level from 0.1 to 40 ng·g−1. At the same time implementation of the ICP-MS method provides data about 41 impurities (Ag, Al, As, Au, B, Ba, Be, Bi, Ce, Co, Cr, Cu, Dy, Er, Ga, Gd, Hf, Ho, In, La, Lu, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Te, Ti, V, W, Y, Yb, Zn, Zr) with LODs from 0.002 to 10 ng·g−1.