Monte Carlo simulation of roughening at step-terraced surfaces

D. M. Kazantsev; N. L. Shwartz; V. L. Alperovich

doi:10.1088/1742-6596/1199/1/012010

Monte Carlo simulation of roughening at step-terraced surfaces

D. M. Kazantsev, N. L. Shwartz, V. L. Alperovich

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

Аннотация

GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E _S = 0.4 eV is estimated for the GaAs(001) surface.

Язык оригинала	английский
Номер статьи	012010
Журнал	Journal of Physics: Conference Series
Том	1199
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1199/1/012010
Состояние	Опубликовано - 17 апр 2019
Событие	20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Российская Федерация Продолжительность: 26 ноя 2018 → 30 ноя 2018

Доступ к документу

10.1088/1742-6596/1199/1/012010

Link to publication in Scopus

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title = "Monte Carlo simulation of roughening at step-terraced surfaces",

abstract = " GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schw{\"o}bel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schw{\"o}bel barrier E S = 0.4 eV is estimated for the GaAs(001) surface. ",

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Monte Carlo simulation of roughening at step-terraced surfaces. / Kazantsev, D. M.; Shwartz, N. L.; Alperovich, V. L.

В: Journal of Physics: Conference Series, Том 1199, № 1, 012010, 17.04.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

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AU - Kazantsev, D. M.

AU - Shwartz, N. L.

AU - Alperovich, V. L.

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N2 - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

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