Аннотация
GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.
Язык оригинала | английский |
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Номер статьи | 012010 |
Журнал | Journal of Physics: Conference Series |
Том | 1199 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 17 апр 2019 |
Событие | 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Российская Федерация Продолжительность: 26 ноя 2018 → 30 ноя 2018 |