TY - JOUR
T1 - Modelling radiation damage to pixel sensors in the ATLAS detector
AU - The ATLAS collaboration
AU - Aaboud, M.
AU - Aad, G.
AU - Abbott, B.
AU - Abbott, D. C.
AU - Abdinov, O.
AU - Abhayasinghe, D. K.
AU - Abidi, S. H.
AU - Abouzeid, O. S.
AU - Abraham, N. L.
AU - Abramowicz, H.
AU - Abreu, H.
AU - Abulaiti, Y.
AU - Acharya, B. S.
AU - Adachi, S.
AU - Adam, L.
AU - Adam Bourdarios, C.
AU - Adamczyk, L.
AU - Adamek, L.
AU - Adelman, J.
AU - Adersberger, M.
AU - Adiguzel, A.
AU - Adye, T.
AU - Affolder, A. A.
AU - Afik, Y.
AU - Agapopoulou, C.
AU - Agaras, M. N.
AU - Aggarwal, A.
AU - Agheorghiesei, C.
AU - Aguilar-Saavedra, J. A.
AU - Ahmadov, F.
AU - Aielli, G.
AU - Akatsuka, S.
AU - Åkesson, T. P.A.
AU - Akilli, E.
AU - Akimov, A. V.
AU - Al Khoury, K.
AU - Alberghi, G. L.
AU - Albert, J.
AU - Alconada Verzini, M. J.
AU - Alderweireldt, S.
AU - Aleksa, M.
AU - Anisenkov, A. V.
AU - Beloborodov, K.
AU - Kazanin, V. F.
AU - Kharlamova, T.
AU - Maximov, D. A.
AU - Podberezko, P.
AU - Rezanova, O. L.
AU - Soukharev, A. M.
AU - Zhulanov, V.
AU - Балдин, Евгений Михайлович
AU - Бобровников, Виктор Сергеевич
AU - Богданчиков, Георгий Александрович
AU - Бузыкаев, Алексей Рафаилович
AU - Харламов, Алексей Георгиевич
AU - Масленников, Алексей Леонидович
AU - Пелеганчук, Сергей Владимирович
AU - Талышев, Алексей Александрович
AU - Тихонов, Юрий Анатольевич
PY - 2019/6/11
Y1 - 2019/6/11
N2 - Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2).
AB - Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2).
KW - Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
KW - Radiation-hard detectors
KW - Solid state detectors
KW - TRAPPING TIME
KW - SILICON DETECTORS
KW - SIMULATION
UR - http://www.scopus.com/inward/record.url?scp=85070359632&partnerID=8YFLogxK
U2 - 10.1088/1748-0221/14/06/P06012
DO - 10.1088/1748-0221/14/06/P06012
M3 - Article
AN - SCOPUS:85070359632
VL - 14
JO - Journal of Instrumentation
JF - Journal of Instrumentation
SN - 1748-0221
IS - 6
M1 - P06012
ER -