Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

O. A. Tkachenko; V. A. Tkachenko; Z. D. Kvon; D. V. Sheglov; Alexander L. Aseev

doi:10.1016/B978-0-12-810512-2.00006-8

Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

O. A. Tkachenko, V. A. Tkachenko, Z. D. Kvon, D. V. Sheglov, Alexander L. Aseev

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › рецензирование

Аннотация

Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

Язык оригинала	английский
Название основной публикации	Advances in Semiconductor Nanostructures
Подзаголовок основной публикации	Growth, Characterization, Properties and Applications
Редакторы	AV Latyshev, AV Dvurechenskii, AL Aseev
Издатель	Elsevier Science Inc.
Страницы	131-155
Число страниц	25
ISBN (электронное издание)	9780128105139
ISBN (печатное издание)	9780128105122
DOI	https://doi.org/10.1016/B978-0-12-810512-2.00006-8
Состояние	Опубликовано - 1 янв. 2017

Доступ к документу

10.1016/B978-0-12-810512-2.00006-8

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Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V., & Aseev, A. L. (2017). Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. В AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (стр. 131-155). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00006-8

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title = "Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures",

abstract = "Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.",

keywords = "2DEG, 3D-electrostatic potentials, Coulomb blockade, Disorder, Graphene-like superlattice, Nanolithography, Quantum ballistics, Quantum dot, Quantum point contact, Ring interferometer, Simulation, Supercomputer calculation, CONDUCTANCE, RING INTERFEROMETER, DOT, POINT CONTACTS, OSCILLATIONS, SCATTERING",

author = "Tkachenko, {O. A.} and Tkachenko, {V. A.} and Kvon, {Z. D.} and Sheglov, {D. V.} and Aseev, {Alexander L.}",

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doi = "10.1016/B978-0-12-810512-2.00006-8",

language = "English",

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pages = "131--155",

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Tkachenko, OA, Tkachenko, VA , Kvon, ZD, Sheglov, DV & Aseev, AL 2017, Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., стр. 131-155. https://doi.org/10.1016/B978-0-12-810512-2.00006-8

Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. / Tkachenko, O. A.; Tkachenko, V. A.; Kvon, Z. D. и др.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. стр. 131-155.

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › рецензирование

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T1 - Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

AU - Tkachenko, O. A.

AU - Tkachenko, V. A.

AU - Kvon, Z. D.

AU - Sheglov, D. V.

AU - Aseev, Alexander L.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

AB - Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

KW - 2DEG

KW - 3D-electrostatic potentials

KW - Coulomb blockade

KW - Disorder

KW - Graphene-like superlattice

KW - Nanolithography

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KW - Quantum point contact

KW - Ring interferometer

KW - Simulation

KW - Supercomputer calculation

KW - CONDUCTANCE

KW - RING INTERFEROMETER

KW - DOT

KW - POINT CONTACTS

KW - OSCILLATIONS

KW - SCATTERING

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PB - Elsevier Science Inc.

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Tkachenko OA, Tkachenko VA , Kvon ZD, Sheglov DV, Aseev AL. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. В Latyshev AV, Dvurechenskii AV, Aseev AL, редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. стр. 131-155 https://doi.org/10.1016/B978-0-12-810512-2.00006-8