MOCVD growth of Pt films using a novel Pt(IV) compound as a precursor

Результат исследования: Научные публикации в периодических изданияхстатья

5 Цитирования (Scopus)

Аннотация

The Me3Pt(acac)Py compound, trimethyl(pentane-2,4-dionato)platinum(IV)pyridine, is synthesized and, for the first time, characterized by physico-chemical methods to determine its chemical composition (elemental analysis, IR-spectroscopy) and thermal behavior (thermogravimetric (TG), differential thermal analyses (DTA), differential scanning calorimetry (DSC), tensometric flow method). Due to its good volatility ln(p/p°) = 16.47-9699/T(K) at moderate temperatures (393-414 K) the compound is offered as a promising precursor for growth of Pt films by metal-organic chemical vapour deposition (MOCVD). The Pt films deposited on various substrates including Si(100), Ta, Ti substrates, cathodes and anodes of the electrodes for pacemakers are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The electrochemical characteristics of Pt films are also determined.

Язык оригиналаанглийский
Страницы (с-по)1053-1059
Число страниц7
ЖурналPhysica Status Solidi (C) Current Topics in Solid State Physics
Том12
Номер выпуска7
DOI
СостояниеОпубликовано - 1 июл 2015

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