MOCVD growth and study of magnetic Co films

S. I. Dorovskikh; R. R. Hairullin; S. V. Sysoev; V. V. Kriventsov; A. V. Panin; Y. V. Shubin; N. B. Morozova; N. V. Gelfond; S. V. Korenev

doi:10.1179/1743294414Y.0000000424

MOCVD growth and study of magnetic Co films

S. I. Dorovskikh, R. R. Hairullin, S. V. Sysoev, V. V. Kriventsov, A. V. Panin, Y. V. Shubin, N. B. Morozova, N. V. Gelfond, S. V. Korenev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

The Co(N'acN'ac)₂ complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

Язык оригинала	английский
Страницы (с-по)	8-14
Число страниц	7
Журнал	Surface Engineering
Том	32
Номер выпуска	1
DOI	https://doi.org/10.1179/1743294414Y.0000000424
Состояние	Опубликовано - 2016

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10.1179/1743294414Y.0000000424

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title = "MOCVD growth and study of magnetic Co films",

abstract = "The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.",

keywords = "Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure",

author = "Dorovskikh, {S. I.} and Hairullin, {R. R.} and Sysoev, {S. V.} and Kriventsov, {V. V.} and Panin, {A. V.} and Shubin, {Y. V.} and Morozova, {N. B.} and Gelfond, {N. V.} and Korenev, {S. V.}",

year = "2016",

doi = "10.1179/1743294414Y.0000000424",

language = "English",

volume = "32",

pages = "8--14",

journal = "Surface Engineering",

issn = "0267-0844",

publisher = "Maney Publishing",

number = "1",

}

MOCVD growth and study of magnetic Co films. / Dorovskikh, S. I.; Hairullin, R. R.; Sysoev, S. V.; Kriventsov, V. V.; Panin, A. V.; Shubin, Y. V.; Morozova, N. B.; Gelfond, N. V.; Korenev, S. V.

В: Surface Engineering, Том 32, № 1, 2016, стр. 8-14.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - MOCVD growth and study of magnetic Co films

AU - Dorovskikh, S. I.

AU - Hairullin, R. R.

AU - Sysoev, S. V.

AU - Kriventsov, V. V.

AU - Panin, A. V.

AU - Shubin, Y. V.

AU - Morozova, N. B.

AU - Gelfond, N. V.

AU - Korenev, S. V.

PY - 2016

Y1 - 2016

N2 - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

AB - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

KW - Co films

KW - Co precursor

KW - Magnetic characteristics

KW - MOCVD

KW - Vapour pressure

UR - http://www.scopus.com/inward/record.url?scp=84959360718&partnerID=8YFLogxK

U2 - 10.1179/1743294414Y.0000000424

DO - 10.1179/1743294414Y.0000000424

M3 - Article

AN - SCOPUS:84959360718

VL - 32

SP - 8

EP - 14

JO - Surface Engineering

JF - Surface Engineering

SN - 0267-0844

IS - 1

ER -

MOCVD growth and study of magnetic Co films

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