Аннотация
The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
Язык оригинала | английский |
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Страницы (с-по) | 8-14 |
Число страниц | 7 |
Журнал | Surface Engineering |
Том | 32 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 2016 |