Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths

D. Yu Protasov, A. K. Bakarov, A. I. Toropov, B. Ya Ber, D. Yu Kazantsev, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

1 Цитирования (Scopus)

Аннотация

The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm2/(V s) at 77 K and 600 cm2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.

Язык оригиналаанглийский
Страницы (с-по)44-52
Число страниц9
ЖурналSemiconductors
Том52
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2018

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