Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

A. S. Yaroshevich; Z. D. Kvon; G. M. Gusev; N. N. Mikhailov

doi:10.1134/S0021364020020113

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

4 Цитирования (Scopus)

Аннотация

The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

Язык оригинала	английский
Страницы (с-по)	121-125
Число страниц	5
Журнал	JETP Letters
Том	111
Номер выпуска	2
DOI	https://doi.org/10.1134/S0021364020020113
Состояние	Опубликовано - янв. 2020

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10.1134/S0021364020020113

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Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. / Yaroshevich, A. S.; Kvon, Z. D.; Gusev, G. M. и др.

В: JETP Letters, Том 111, № 2, 01.2020, стр. 121-125.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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