Micro-transformer-based integrated digital isolator in 180/90 nm CMOS

Vladimir Butuzov, Alexey Nazarenko, Yuri Bocharov, Oleg Kus, Vitaly Prokopyev, Nikita Dmitriev, Evgeny Smirnov, Tatiana Smirnova, Aleksei Trofimov, Nikolay Salynsky

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.

Язык оригиналаанглийский
Название основной публикации2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings
РедакторыO Stukach
ИздательInstitute of Electrical and Electronics Engineers Inc.
Число страниц4
ISBN (электронное издание)9781538651414
DOI
СостояниеОпубликовано - 1 апр 2019
Событие2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Tomsk, Российская Федерация
Продолжительность: 18 апр 201920 апр 2019

Серия публикаций

Название2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings

Конференция

Конференция2019 International Siberian Conference on Control and Communications, SIBCON 2019
СтранаРоссийская Федерация
ГородTomsk
Период18.04.201920.04.2019

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    Butuzov, V., Nazarenko, A., Bocharov, Y., Kus, O., Prokopyev, V., Dmitriev, N., Smirnov, E., Smirnova, T., Trofimov, A., & Salynsky, N. (2019). Micro-transformer-based integrated digital isolator in 180/90 nm CMOS. В O. Stukach (Ред.), 2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings [8729578] (2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2019.8729578