Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

V. A. Volodin; G. N. Kamaev; V. A. Gritsenko; A. A. Gismatulin; A. Chin; M. Vergnat

doi:10.1063/1.5079690

Memristor effect in GeO[SiO₂] and GeO[SiO] solid alloys films

V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, A. A. Gismatulin, A. Chin, M. Vergnat

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

12 Цитирования (Scopus)

Аннотация

The p-Si(or n-Si)/GeO[SiO₂] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO₂ and SiO₂ (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO₂] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO₂] or GeO[SiO] films.

Язык оригинала	английский
Номер статьи	233104
Число страниц	5
Журнал	Applied Physics Letters
Том	114
Номер выпуска	23
DOI	https://doi.org/10.1063/1.5079690
Состояние	Опубликовано - 10 июн. 2019

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10.1063/1.5079690

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@article{81a3ee4dfc6743d29bc597307a98aa03,

title = "Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films",

abstract = "The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.",

keywords = "NANOCRYSTALS, DEVICES, FIELD, SI",

author = "Volodin, {V. A.} and Kamaev, {G. N.} and Gritsenko, {V. A.} and Gismatulin, {A. A.} and A. Chin and M. Vergnat",

year = "2019",

month = jun,

day = "10",

doi = "10.1063/1.5079690",

language = "English",

volume = "114",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Chin, A.

AU - Vergnat, M.

PY - 2019/6/10

Y1 - 2019/6/10

N2 - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

AB - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

KW - NANOCRYSTALS

KW - DEVICES

KW - FIELD

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85067298957&partnerID=8YFLogxK

U2 - 10.1063/1.5079690

DO - 10.1063/1.5079690

M3 - Article

AN - SCOPUS:85067298957

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233104