Memory Properties of SiO x- and SiN x-Based Memristors

V. A. Gritsenko; A. A. Gismatulin; O. M. Orlov

doi:10.1134/S2635167621060070

Memory Properties of SiO_x- and SiN_x-Based Memristors

V. A. Gritsenko, A. A. Gismatulin, O. M. Orlov

Лаборатория полупроводниковых и диэлектрических материалов ФФ

Результат исследования: Научные публикации в периодических изданиях › обзорная статья › рецензирование

Аннотация

Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiO_x- and SiN_x-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 10², a memristor endurance of up to 10⁹ cycles at the same memory window, and a memristor retention of up to 10⁵ s at the same memory window.

Язык оригинала	английский
Страницы (с-по)	722-731
Число страниц	10
Журнал	Nanobiotechnology reports
Том	16
Номер выпуска	6
DOI	https://doi.org/10.1134/S2635167621060070
Состояние	Опубликовано - нояб. 2021

Предметные области OECD FOS+WOS

2.1.NS НАНОНАУКА И НАНОТЕХНОЛОГИИ
2.08.DB БИОТЕХНОЛОГИЯ И ПРИКЛАДНАЯ МИКРОБИОЛОГИЯ

Доступ к документу

10.1134/S2635167621060070

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Ссылка на публикацию в Scopus

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abstract = "Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.",

author = "Gritsenko, {V. A.} and Gismatulin, {A. A.} and Orlov, {O. M.}",

note = "Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 19-29-03018 (SiO-based memristors) and the Russian Science Foundation, project no. 19-19-00286 (SiN-based memristors). x x Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

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Memory Properties of SiO_x- and SiN_x-Based Memristors. / Gritsenko, V. A.; Gismatulin, A. A.; Orlov, O. M.

В: Nanobiotechnology reports, Том 16, № 6, 11.2021, стр. 722-731.

Результат исследования: Научные публикации в периодических изданиях › обзорная статья › рецензирование

TY - JOUR

T1 - Memory Properties of SiO x- and SiN x-Based Memristors

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Orlov, O. M.

N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 19-29-03018 (SiO-based memristors) and the Russian Science Foundation, project no. 19-19-00286 (SiN-based memristors). x x Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/11

Y1 - 2021/11

N2 - Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.

AB - Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.

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