Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts

D. S. Miserev, A. Srinivasan, O. A. Tkachenko, V. A. Tkachenko, I. Farrer, D. A. Ritchie, A. R. Hamilton, O. P. Sushkov

Результат исследования: Научные публикации в периодических изданияхстатья

7 Цитирования (Scopus)

Аннотация

In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional B+k-4σ+ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B-k-2σ+ considered until now.

Язык оригиналаанглийский
Номер статьи116803
Число страниц5
ЖурналPhysical Review Letters
Том119
Номер выпуска11
DOI
СостояниеОпубликовано - 12 сен 2017

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  • Цитировать

    Miserev, D. S., Srinivasan, A., Tkachenko, O. A., Tkachenko, V. A., Farrer, I., Ritchie, D. A., Hamilton, A. R., & Sushkov, O. P. (2017). Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts. Physical Review Letters, 119(11), [116803]. https://doi.org/10.1103/PhysRevLett.119.116803