MBE-grown InSb photodetector arrays

A. K. Bakarov; A. K. Gutakovskii; K. S. Zhuravlev; A. P. Kovchavtsev; A. I. Toropov; I. D. Burlakov; K. O. Boltar’; P. V. Vlasov; A. A. Lopukhin

doi:10.1134/S1063784217060044

MBE-grown InSb photodetector arrays

A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar’, P. V. Vlasov, A. A. Lopukhin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

Язык оригинала	английский
Страницы (с-по)	915-919
Число страниц	5
Журнал	Technical Physics
Том	62
Номер выпуска	6
DOI	https://doi.org/10.1134/S1063784217060044
Состояние	Опубликовано - 1 июн. 2017

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10.1134/S1063784217060044

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title = "MBE-grown InSb photodetector arrays",

abstract = "The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.",

author = "Bakarov, {A. K.} and Gutakovskii, {A. K.} and Zhuravlev, {K. S.} and Kovchavtsev, {A. P.} and Toropov, {A. I.} and Burlakov, {I. D.} and Boltar{\textquoteright}, {K. O.} and Vlasov, {P. V.} and Lopukhin, {A. A.}",

year = "2017",

month = jun,

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doi = "10.1134/S1063784217060044",

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T1 - MBE-grown InSb photodetector arrays

AU - Bakarov, A. K.

AU - Gutakovskii, A. K.

AU - Zhuravlev, K. S.

AU - Kovchavtsev, A. P.

AU - Toropov, A. I.

AU - Burlakov, I. D.

AU - Boltar’, K. O.

AU - Vlasov, P. V.

AU - Lopukhin, A. A.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

AB - The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

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U2 - 10.1134/S1063784217060044

DO - 10.1134/S1063784217060044

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SP - 915

EP - 919

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 6

ER -

MBE-grown InSb photodetector arrays

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