MBE-grown InSb photodetector arrays

A. K. Bakarov; A. K. Gutakovskii; K. S. Zhuravlev; A. P. Kovchavtsev; A. I. Toropov; I. D. Burlakov; K. O. Boltar’; P. V. Vlasov; A. A. Lopukhin

doi:10.1134/S1063784217060044

MBE-grown InSb photodetector arrays

A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar’, P. V. Vlasov, A. A. Lopukhin

Результат исследования: Научные публикации в периодических изданиях › статья

1 Цитирования (Scopus)

Аннотация

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

Язык оригинала	английский
Страницы (с-по)	915-919
Число страниц	5
Журнал	Technical Physics
Том	62
Номер выпуска	6
DOI	https://doi.org/10.1134/S1063784217060044
Состояние	Опубликовано - 1 июн 2017

Доступ к документу

10.1134/S1063784217060044

Link to publication in Scopus

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Цитировать

Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., & Lopukhin, A. A. (2017). MBE-grown InSb photodetector arrays. Technical Physics, 62(6), 915-919. https://doi.org/10.1134/S1063784217060044

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MBE-grown InSb photodetector arrays. / Bakarov, A. K.; Gutakovskii, A. K.; Zhuravlev, K. S.; Kovchavtsev, A. P.; Toropov, A. I.; Burlakov, I. D.; Boltar’, K. O.; Vlasov, P. V.; Lopukhin, A. A.

В: Technical Physics, Том 62, № 6, 01.06.2017, стр. 915-919.

Результат исследования: Научные публикации в периодических изданиях › статья

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AU - Toropov, A. I.

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