Аннотация
The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
Язык оригинала | английский |
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Страницы (с-по) | 915-919 |
Число страниц | 5 |
Журнал | Technical Physics |
Том | 62 |
Номер выпуска | 6 |
DOI | |
Состояние | Опубликовано - 1 июн 2017 |