Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate

Zh V. Smagina, V. A. Zinovyev, A. F. Zinovieva, M. V. Stepikhova, A. V. Peretokin, E. E. Rodyakina, S. A. Dyakov, A. V. Novikov, A. V. Dvurechenskii

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

The results of studying the luminescent properties of epitaxially grown structures with spatially ordered Ge/Si nanoislands (quantum dots), in which the pit-patterned “silicon-on-insulator” substrates serve both for the spatial ordering of quantum dots and for the two-dimensional photonic crystal formation, are presented. It is found that with a certain choice of pit-patterned substrate parameters (diameter of pits and their spatial period), in the photoluminescence spectra of such structures, the multiple narrow peaks are observed. In addition, a significant increase in the quantum dot luminescence signal intensity occurs in the near-infrared range. The effects are related to resonance interaction of quantum dot emitters with photonic crystal modes. The luminescence enhancement effect persists up to room temperatures.

Язык оригиналаанглийский
Номер статьи119033
ЖурналJournal of Luminescence
Том249
DOI
СостояниеОпубликовано - сен 2022

Предметные области OECD FOS+WOS

  • 1.06 БИОЛОГИЧЕСКИЕ НАУКИ
  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
  • 1.04 ХИМИЧЕСКИЕ НАУКИ

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