@inproceedings{252230e684334701b41e38b2a81600a0,
title = "Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions",
abstract = " The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds. ",
keywords = "photoluminescence, Si Ge O compounds, structural defect, swift heavy ions, IRRADIATION, PHOTOLUMINESCENCE, BLUE, NANOCRYSTALS, DEFECT, OPTICAL-PROPERTIES, OXIDES, SixGeyOz compounds",
author = "Cherkova, {S. G.} and Volodin, {V. A.} and Skuratov, {V. A.} and M. Stoffel and H. Rinnert and M. Vergnat",
year = "2019",
month = jan,
day = "1",
doi = "10.1117/12.2521696",
language = "English",
volume = "11022",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Lukichev, {Vladimir F.} and Rudenko, {Konstantin V.}",
booktitle = "International Conference on Micro- and Nano-Electronics 2018",
address = "United States",
note = "International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 ; Conference date: 01-10-2018 Through 05-10-2018",
}