The luminescent and structural properties of GeO
thin films and GeO/SiO
multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10
, were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge
glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO
, but causes the intermixing of GeO/SiO
layers with the formation of Ge-O-Si bonds.