Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

S. G. Cherkova; V. A. Skuratov; V. A. Volodin

doi:10.1134/S1063782619110046

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

S. G. Cherkova, V. A. Skuratov, V. A. Volodin

Результат исследования: Научные публикации в периодических изданиях › статья

1 Цитирования (Scopus)

Аннотация

The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 10¹¹–10¹³ cm^–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

Язык оригинала	английский
Страницы (с-по)	1427-1430
Число страниц	4
Журнал	Semiconductors
Том	53
Номер выпуска	11
DOI	https://doi.org/10.1134/S1063782619110046
Состояние	Опубликовано - 6 ноя 2019

Доступ к документу

10.1134/S1063782619110046

Link to publication in Scopus

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Цитировать

Cherkova, S. G., Skuratov, V. A., & Volodin, V. A. (2019). Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions. Semiconductors, 53(11), 1427-1430. https://doi.org/10.1134/S1063782619110046

@article{2b3d86d13a774ca8a6180f90edf0cd16,

title = "Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions",

abstract = "The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.",

keywords = "defects in silicon, photoluminescence, swift heavy ions, ROOM-TEMPERATURE, PHOTOLUMINESCENCE, DEFECT, RADIATION, ELECTROLUMINESCENCE, DAMAGE, LAYERS",

author = "Cherkova, {S. G.} and Skuratov, {V. A.} and Volodin, {V. A.}",

year = "2019",

month = nov,

day = "6",

doi = "10.1134/S1063782619110046",

language = "English",

volume = "53",

pages = "1427--1430",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "11",

}

TY - JOUR

T1 - Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

AU - Cherkova, S. G.

AU - Skuratov, V. A.

AU - Volodin, V. A.

PY - 2019/11/6

Y1 - 2019/11/6

N2 - The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

AB - The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

KW - defects in silicon

KW - photoluminescence

KW - swift heavy ions

KW - ROOM-TEMPERATURE

KW - PHOTOLUMINESCENCE

KW - DEFECT

KW - RADIATION

KW - ELECTROLUMINESCENCE

KW - DAMAGE

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85074810832&partnerID=8YFLogxK

U2 - 10.1134/S1063782619110046

DO - 10.1134/S1063782619110046

M3 - Article

AN - SCOPUS:85074810832

VL - 53

SP - 1427

EP - 1430

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -