Аннотация
It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
Язык оригинала | английский |
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Страницы (с-по) | 1513-1516 |
Число страниц | 4 |
Журнал | Semiconductors |
Том | 51 |
Номер выпуска | 11 |
DOI | |
Состояние | Опубликовано - 1 ноя 2017 |