Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

V. E. Nikiforov; D. S. Abramkin; T. S. Shamirzaev

doi:10.1134/S1063782617110203

Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

V. E. Nikiforov, D. S. Abramkin, T. S. Shamirzaev

Результат исследования: Научные публикации в периодических изданиях › статья

Аннотация

It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

Язык оригинала	английский
Страницы (с-по)	1513-1516
Число страниц	4
Журнал	Semiconductors
Том	51
Номер выпуска	11
DOI	https://doi.org/10.1134/S1063782617110203
Состояние	Опубликовано - 1 ноя 2017

Доступ к документу

10.1134/S1063782617110203

Link to publication in Scopus

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Цитировать

Nikiforov, V. E., Abramkin, D. S., & Shamirzaev, T. S. (2017). Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. Semiconductors, 51(11), 1513-1516. https://doi.org/10.1134/S1063782617110203

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