Low-temperature intracenter relaxation times of shallow donors in germanium

R. Kh Zhukavin; K. A. Kovalevskii; S. M. Sergeev; Yu Yu Choporova; V. V. Gerasimov; V. V. Tsyplenkov; B. A. Knyazev; N. V. Abrosimov; S. G. Pavlov; V. N. Shastin; H. Schneider; N. Deßmann; O. A. Shevchenko; N. A. Vinokurov; G. N. Kulipanov; H. W. Hübers

doi:10.1134/S0021364017210147

Low-temperature intracenter relaxation times of shallow donors in germanium

R. Kh Zhukavin, K. A. Kovalevskii, S. M. Sergeev, Yu Yu Choporova, V. V. Gerasimov, V. V. Tsyplenkov, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, V. N. Shastin, H. Schneider, N. Deßmann, O. A. Shevchenko, N. A. Vinokurov, G. N. Kulipanov, H. W. Hübers

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

11 Цитирования (Scopus)

Аннотация

The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels.

Язык оригинала	английский
Страницы (с-по)	571-575
Число страниц	5
Журнал	JETP Letters
Том	106
Номер выпуска	9
DOI	https://doi.org/10.1134/S0021364017210147
Состояние	Опубликовано - 1 нояб. 2017

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10.1134/S0021364017210147

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Zhukavin, R. K., Kovalevskii, K. A., Sergeev, S. M., Choporova, Y. Y., Gerasimov, V. V., Tsyplenkov, V. V., Knyazev, B. A., Abrosimov, N. V., Pavlov, S. G., Shastin, V. N., Schneider, H., Deßmann, N., Shevchenko, O. A., Vinokurov, N. A., Kulipanov, G. N., & Hübers, H. W. (2017). Low-temperature intracenter relaxation times of shallow donors in germanium. JETP Letters, 106(9), 571-575. https://doi.org/10.1134/S0021364017210147

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abstract = "The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels.",

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author = "Zhukavin, {R. Kh} and Kovalevskii, {K. A.} and Sergeev, {S. M.} and Choporova, {Yu Yu} and Gerasimov, {V. V.} and Tsyplenkov, {V. V.} and Knyazev, {B. A.} and Abrosimov, {N. V.} and Pavlov, {S. G.} and Shastin, {V. N.} and H. Schneider and N. De{\ss}mann and Shevchenko, {O. A.} and Vinokurov, {N. A.} and Kulipanov, {G. N.} and H{\"u}bers, {H. W.}",

year = "2017",

month = nov,

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doi = "10.1134/S0021364017210147",

language = "English",

volume = "106",

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Zhukavin, RK, Kovalevskii, KA, Sergeev, SM, Choporova, YY , Gerasimov, VV, Tsyplenkov, VV, Knyazev, BA, Abrosimov, NV, Pavlov, SG, Shastin, VN, Schneider, H, Deßmann, N, Shevchenko, OA, Vinokurov, NA, Kulipanov, GN & Hübers, HW 2017, 'Low-temperature intracenter relaxation times of shallow donors in germanium', JETP Letters, том. 106, № 9, стр. 571-575. https://doi.org/10.1134/S0021364017210147

Low-temperature intracenter relaxation times of shallow donors in germanium. / Zhukavin, R. Kh; Kovalevskii, K. A.; Sergeev, S. M. и др.

В: JETP Letters, Том 106, № 9, 01.11.2017, стр. 571-575.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Low-temperature intracenter relaxation times of shallow donors in germanium

AU - Zhukavin, R. Kh

AU - Kovalevskii, K. A.

AU - Sergeev, S. M.

AU - Choporova, Yu Yu

AU - Gerasimov, V. V.

AU - Tsyplenkov, V. V.

AU - Knyazev, B. A.

AU - Abrosimov, N. V.

AU - Pavlov, S. G.

AU - Shastin, V. N.

AU - Schneider, H.

AU - Deßmann, N.

AU - Shevchenko, O. A.

AU - Vinokurov, N. A.

AU - Kulipanov, G. N.

AU - Hübers, H. W.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels.

AB - The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels.

KW - FREE-ELECTRON LASER

KW - FACILITY

UR - http://www.scopus.com/inward/record.url?scp=85041006671&partnerID=8YFLogxK

U2 - 10.1134/S0021364017210147

DO - 10.1134/S0021364017210147

M3 - Article

AN - SCOPUS:85041006671

VL - 106

SP - 571

EP - 575

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 9

ER -

Low-temperature intracenter relaxation times of shallow donors in germanium

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