Localization of Excitons on Planar Defects in Semiconductor Crystals

M. M. Mahmoodian; A. V. Chaplik

doi:10.1134/S0021364020160080

Localization of Excitons on Planar Defects in Semiconductor Crystals

M. M. Mahmoodian, A. V. Chaplik

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e²/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V^1/4 and V in the cases of weak and strong localization, respectively.

Язык оригинала	английский
Страницы (с-по)	230-233
Число страниц	4
Журнал	JETP Letters
Том	112
Номер выпуска	4
DOI	https://doi.org/10.1134/S0021364020160080
Состояние	Опубликовано - 1 авг. 2020

Доступ к документу

10.1134/S0021364020160080

Другие файлы и ссылки

Link to publication in Scopus

Цитировать

@article{99311056fa4f431db1df255d07a4f2b4,

title = "Localization of Excitons on Planar Defects in Semiconductor Crystals",

abstract = "Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.",

keywords = "STATE, WELL",

author = "Mahmoodian, {M. M.} and Chaplik, {A. V.}",

year = "2020",

month = aug,

day = "1",

doi = "10.1134/S0021364020160080",

language = "English",

volume = "112",

pages = "230--233",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",

number = "4",

}

TY - JOUR

T1 - Localization of Excitons on Planar Defects in Semiconductor Crystals

AU - Mahmoodian, M. M.

AU - Chaplik, A. V.

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

AB - Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

KW - STATE

KW - WELL

UR - http://www.scopus.com/inward/record.url?scp=85094145576&partnerID=8YFLogxK

U2 - 10.1134/S0021364020160080

DO - 10.1134/S0021364020160080

M3 - Article

AN - SCOPUS:85094145576

VL - 112

SP - 230

EP - 233

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 4

ER -

Localization of Excitons on Planar Defects in Semiconductor Crystals

Аннотация

Доступ к документу

Другие файлы и ссылки

Fingerprint

Цитировать