Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Andrew I. Yakimov, Victor V. Kirienko, Dmitrii E. Utkin, Anatoly V. Dvurechenskii

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QDs is the small absorbance of infrared radiation due to the low density of the states coupled to the dots. In this paper, we report on the Ge/Si QD pin photodiodes integrated with photon-trapping hole array structures of various thicknesses. The aim of this study was to search for the hole array thickness that provided the maximum optical response of the light-trapping Ge/Si QD detectors. With this purpose, the embedded hole arrays were etched to different depths ranging from 100 to 550 nm. By micropatterning Ge/Si QD photodiodes, we were able to redirect normal incident light laterally along the plane of the dots, therefore facilitating the optical conversion of the near-infrared photodetectors due to elongation of the effective absorption length. Compared with the conventional flat photodetector, the responsivity of all microstructured devices had a polarization-independent improvement in the 1.0–1.8-μm wavelength range. The maximum photocurrent enhancement factor (≈50× at 1.7 μm) was achieved when the thickness of the photon-trapping structure reached the depth of the buried QD layers.

Язык оригиналаанглийский
Номер статьи2993
ЖурналNanomaterials
Том12
Номер выпуска17
DOI
СостояниеОпубликовано - сент. 2022

Предметные области OECD FOS+WOS

  • 2.1.NS НАНОНАУКА И НАНОТЕХНОЛОГИИ
  • 2.05.PM МАТЕРИАЛОВЕДЕНИЕ, МУЛЬТИДИСЦИПЛИНАРНОЕ
  • 1.03.UB ФИЗИКА, ПРИКЛАДНАЯ
  • 1.04.DY ХИМИЯ, МУЛЬТИДИСЦИПЛИНАРНАЯ

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